- 您现在的位置：买卖IC网 > Sheet目录483 > NDD05N50ZT4G (ON Semiconductor)MOSFET N-CH 500V 5A DPAK
NDF05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
10.0
1200
1.0
T J = 150 ° C
1100
1000
900
800
700
600
500
400
300
C iss
T J = 25 ° C
V GS = 0 V
f = 1 MHz
0.1
0
50
100 150 200 250 300 350 400 450 500
200
100
0
0
C rss
5
C oss
10 15 20 25 30 35 40 45
50
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 7. Drain ? to ? Source Leakage Current
versus Voltage
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
15.0
14.0
13.0
12.0
11.0
V DS
Q T
300
250
10.0
9.0
8.0
7.0
Q GS
Q GD
V GS
200
150
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
2
4
V DS = 250 V
I D = 5 A
T J = 25 ° C
6 8 10 12 14 16 18
100
50
0
20
Q g , TOTAL GATE CHARGE (nC)
Figure 9. Gate ? to ? Source Voltage and
Drain ? to ? Source Voltage versus Total Charge
1000
100
V DD = 250 V
I D = 5 A
V GS = 10 V
t d(off)
100
10
10
t r
t f
t d(on)
1.0
T J = 150 ° C
125 ° C
25 ° C
1.0
1
10
100
0.1
0.3
? 55 ° C
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
1.2
R G , GATE RESISTANCE ( W )
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
http://onsemi.com
4
V SD , SOURCE ? TO ? DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NDF02N60ZH
MOSFET N CH 600V 2.4A TO220FP
NDF03N60ZH
MOSFET N CH 600V 4.8A TO220FP
NDF04N60ZH
MOSFET N CH 600V 4.8A TO220FP
NDF04N62ZG
MOSFET N-CH 620V 2OHM TO220FP
NDF05N50ZH
MOSFET N-CH 500V 4.4A TO-220FP
NDF06N60ZG
MOSFET N-CH 600V 7.1A TO-220FP
NDF06N60ZH
MOSFET N CH 600V 7.1A TO220FP
NDF06N62ZG
MOSFET N-CH 620V 1.2OHM TO220FP
相关代理商/技术参数
NDD60N360U1T4G
制造商:ON Semiconductor 功能描述:NFET DPAK 600V 114A 360MO - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NFET DPAK 600V 114A 360MO
NDF
功能描述:XLR 连接器 XLR DUMMY PLUG FEMALE RECEPTACLES RoHS:否 制造商:Neutrik 标准:Standard XLR 产品类型:Connectors 型式:Female 位置/触点数量:3 端接类型:Solder 安装风格:Cable 方向:Vertical
NDF02N60Z
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 600 V, 4.0
NDF02N60ZG
功能描述:MOSFET 4.8 OHM 600V TO-220FP RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF02N60ZH
功能描述:MOSFET NFET 600V 2.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF03N60Z
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 600 V, 3.3
NDF03N60ZG
功能描述:MOSFET 3.6 OHM 600V TO-220FP RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF03N60ZH
功能描述:MOSFET NFET 600V 3A 3.3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube